Interfatial Reaction of Vapor Deposited Si and Ge Layers and Substrate Atomic Layer.

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100)

We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentra...

Structure, strain and stability of ultra-thin Ge layers in Si/Ge/Si axial heterojunction nanowires

The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt hetero...

Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor deposition

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface layer between an atomic layer deposited Al2O3 gate dielectric and a Ge(100) substrate during forming gas anneal (FGA). Capacitance- and conduc...

Reconstruction and intermixing in thin Ge layers on Si „ 001 ...

In this work the Monte Carlo method with an empirical potential model for atomic interactions is applied to study reconstruction and intermixing at a Ge-covered Si~001! surface. We investigate the structure and energetics of the 23n reconstruction which serves as a strain-relief mechanism. The optimal value of n is found to be strongly dependent on the thickness of the Ge overlayer. Si-Ge inter...